Ultra-wide bandgap (UWBG) semiconductors, such as Ga2O3, diamond, Al x Ga1-x N/AlN, have shown significant potential for sun-blind ultraviolet photodetection, with applications in environmental monitoring, chemical/biological analysis, industrial processes and military technologies. . Over the past decades, significant progress has been made in the synthesis of high-quality UWBG semiconductors, which has facilitated the development of various high-performance solar blind photodetectors (SBPDs). However, the preparation of these semiconductors often requires complex growth techniques and high growth temperatures, which can hamper their application. Additionally, the growth process of these materials often introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), a phenomenon that severely hampers device performance.

The objective of this research topic is to explore and address the main challenges in the field of SBPDs based on UWBG semiconductors. This includes studying the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors, as well as exploring innovative approaches to suppress Vo electrical activity and improve device performance. The research also aims to evaluate the current state of device performance for SBPDs employing these UWBG semiconductors in different device configurations, and to guide future research efforts in this critical area.

To gather more information on the development and application of SBPDs based on UWBG semiconductors, we welcome articles covering, but not limited to, the following topics:

– The synthesis and characterization of high quality UWBG semiconductors.

– The development and evaluation of different device architectures for SBPD.

– The study of the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors.

– Exploring innovative approaches to suppress electrical activity from Vo and improve device performance.

– Evaluating the current state of device performance for SBPDs using UWBG semiconductors in different device configurations.

– Exploring the potential applications of SBPDs based on UWBG semiconductors in various fields.

Keywords: UWBG semiconductors, semiconductor-based photodetectors, sun-blind ultraviolet photodetection

Important note: All contributions to this research topic must fall within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more appropriate section or journal at any stage of peer review.

Ultra-wide bandgap (UWBG) semiconductors, such as Ga2O3, diamond, Al x Ga1-x N/AlN, have shown significant potential for sun-blind ultraviolet photodetection, with applications in environmental monitoring, chemical/biological analysis, industrial processes and military technologies. . Over the past decades, significant progress has been made in the synthesis of high-quality UWBG semiconductors, which has facilitated the development of various high-performance solar blind photodetectors (SBPDs). However, the preparation of these semiconductors often requires complex growth techniques and high growth temperatures, which can hamper their application. Additionally, the growth process of these materials often introduces unavoidable oxygen vacancies (Vo), leading to persistent photoconductivity (PPC), a phenomenon that severely hampers device performance.

The objective of this research topic is to explore and address the main challenges in the field of SBPDs based on UWBG semiconductors. This includes studying the effects of different growing techniques and conditions on the quality and performance of UWBG semiconductors, as well as exploring innovative approaches to suppress Vo electrical activity and improve device performance. The research also aims to evaluate the current state of device performance for SBPDs employing these UWBG semiconductors in different device configurations, and to guide future research efforts in this critical area.

To gather more information on the development and application of SBPDs based on UWBG semiconductors, we welcome articles covering, but not limited to, the following topics:

– The synthesis and characterization of high quality UWBG semiconductors.

– The development and evaluation of different device architectures for SBPD.

– The study of the effects of different growth techniques and conditions on the quality and performance of UWBG semiconductors.

– Exploring innovative approaches to suppress electrical activity from Vo and improve device performance.

– Evaluating the current state of device performance for SBPDs using UWBG semiconductors in different device configurations.

– Exploring the potential applications of SBPDs based on UWBG semiconductors in various fields.

Keywords: UWBG semiconductors, semiconductor-based photodetectors, sun-blind ultraviolet photodetection

Important note: All contributions to this research topic must fall within the scope of the section and journal to which they are submitted, as defined in their mission statements. Frontiers reserves the right to guide an out-of-scope manuscript to a more appropriate section or journal at any stage of peer review.